材料科学资料

The high specifity of inVia enables graphene to be easily differentiated from other materials, including carbon allotropes such as carbon nanotube and diamond.

Application summary: Raman measurements on graphene

The high specifity of inVia enables graphene to be easily differentiated from other materials, including carbon allotropes such as carbon nanotube and diamond.

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With so many unique properties, working with 2D materials can be challenging. Whether it is large regions, uneven samples, or small discrete flakes, Renishaw’s inVia Qontor confocal Raman microscope gives you reliable results, quickly and easily.

Application note: Analyse 2D materials with the inVia Qontor confocal Raman microscope

With so many unique properties, working with 2D materials can be challenging. Whether it is large regions, uneven samples, or small discrete flakes, Renishaw’s inVia Qontor confocal Raman microscope gives you reliable results, quickly and easily.

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Product note detailing how you can perform Rayleigh imaging on the inVia confocal Raman microscope.

Product note: Rayleigh imaging using the inVia™ confocal Raman microscope

Product note detailing how you can perform Rayleigh imaging on the inVia confocal Raman microscope.

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When light interacts with semiconducting materials it can induce electrical currents (‘photocurrents’). These currents carry information about the electronic, optical, and charge transport properties of the material. This information is complementary to that obtainable from Raman scattering, which can identify physical changes in the material properties. This application note demonstrates the capability to simultaneously collect Raman and photocurrent data using the photocurrent mapping module concurrently with an inVia Raman microscope.

Application note: Photocurrent measurements on the inVia™ confocal Raman microscope

When light interacts with semiconducting materials it can induce electrical currents (‘photocurrents’). These currents carry information about the electronic, optical, and charge transport properties of the material. This information is complementary to that obtainable from Raman scattering, which can identify physical changes in the material properties. This application note demonstrates the capability to simultaneously collect Raman and photocurrent data using the photocurrent mapping module concurrently with an inVia Raman microscope.

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Over the last decade compound semiconductors have attracted a great deal of attention because they offer properties suitable for next generation devices in a wide range of application areas. Historically, the fabrication of these devices has been hindered by material challenges. While these have mainly been conquered at the research level, problems still persist when scaling up to industrial production. Renishaw’s inVia Raman microscope is a non-invasive, non-destructive characterisation tool which provides sub-micrometre information on the vibrational, crystal and electronic structure of materials.

Application note: Analyse compound semiconductors with the inVia™ Raman microscope

Over the last decade compound semiconductors have attracted a great deal of attention because they offer properties suitable for next generation devices in a wide range of application areas. Historically, the fabrication of these devices has been hindered by material challenges. While these have mainly been conquered at the research level, problems still persist when scaling up to industrial production. Renishaw’s inVia Raman microscope is a non-invasive, non-destructive characterisation tool which provides sub-micrometre information on the vibrational, crystal and electronic structure of materials.

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The properties of silicon carbide are highly dependent on its crystal structure (it can exist in many polytypes), on the quality of the crystal, and on the number and types of defects present. Manufacturers of silicon carbide raw material and devices need to monitor and control these attributes to enhance yield. The first step in controlling these parameters is to measure them repeatably and quantifiably. Renishaw’s Raman systems are ideal for this.

Application note: Analyse silicon carbide (SiC) with the inVia Raman microscope

The properties of silicon carbide are highly dependent on its crystal structure (it can exist in many polytypes), on the quality of the crystal, and on the number and types of defects present. Manufacturers of silicon carbide raw material and devices need to monitor and control these attributes to enhance yield. The first step in controlling these parameters is to measure them repeatably and quantifiably. Renishaw’s Raman systems are ideal for this.

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An article in Compound Semiconductor magazine, October 2015, describes how Raman spectroscopy allows routine mapping of SiC wafers in little more than an hour.

News release: Identifying imperfections with Raman spectroscopy

An article in Compound Semiconductor magazine, October 2015, describes how Raman spectroscopy allows routine mapping of SiC wafers in little more than an hour.

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When light interacts with semiconducting materials it can induce electrical currents (‘photocurrents’). These currents carry information about the electronic, optical, and charge transport properties of the material. This information is complementary to that obtainable from Raman scattering, which can identify physical changes in the material properties. This application note demonstrates the capability to simultaneously collect Raman and photocurrent data using the photocurrent mapping module concurrently with an inVia Raman microscope.

Application note: Photocurrent measurements on the inVia™ confocal Raman microscope

When light interacts with semiconducting materials it can induce electrical currents (‘photocurrents’). These currents carry information about the electronic, optical, and charge transport properties of the material. This information is complementary to that obtainable from Raman scattering, which can identify physical changes in the material properties. This application note demonstrates the capability to simultaneously collect Raman and photocurrent data using the photocurrent mapping module concurrently with an inVia Raman microscope.

[1.6MB]

A poster demonstrating the inVia's capabilities at studying the efficiency of solar cells against the quality of their manufacture.

Poster: Simultaneous photocurrent and Raman mapping of single crystalline silicon solar cell modules

A poster demonstrating the inVia's capabilities at studying the efficiency of solar cells against the quality of their manufacture.

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Chemically characterise lithium-ion batteries with Renishaw’s inVia Raman microscope. inVia is the ultimate system for studies ranging from fundamental research on the materials involved through to final product quality control and failure analysis.

Application note: Analyse lithium-ion batteries with the inVia™ confocal Raman microscope

Chemically characterise lithium-ion batteries with Renishaw’s inVia Raman microscope. inVia is the ultimate system for studies ranging from fundamental research on the materials involved through to final product quality control and failure analysis.

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The inVia confocal Raman microscope is ideal for locating, discriminating, and quantifying the different forms of carbon present in anodes, even those with subtle variations in structure.

Application note: Analyse Li-ion battery anodes with the inVia™ confocal Raman microscope

The inVia confocal Raman microscope is ideal for locating, discriminating, and quantifying the different forms of carbon present in anodes, even those with subtle variations in structure.

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